دیتاشیت 2N2905A
مشخصات دیتاشیت
| نام دیتاشیت |
2N290(5,7)A
|
| حجم فایل |
743.615
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Microchip Tech 2N2905A
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Transistor Type:
PNP
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Operating Temperature:
-65°C~+200°C@(Tj)
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Collector Current (Ic):
600mA
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Power Dissipation (Pd):
800mW
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Transition Frequency (fT):
-
-
DC Current Gain (hFE@Ic,Vce):
100@150mA,10V
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Collector Cut-Off Current (Icbo):
1uA
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Collector-Emitter Breakdown Voltage (Vceo):
60V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1.6V@500mA,50mA
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Package:
TO-39
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Manufacturer:
Microchip Tech
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Series:
-
-
Packaging:
Tube
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
600mA
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Voltage - Collector Emitter Breakdown (Max):
60V
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Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
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Current - Collector Cutoff (Max):
10nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
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Power - Max:
600mW
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Frequency - Transition:
200MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-205AD, TO-39-3 Metal Can
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Supplier Device Package:
TO-39
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Base Part Number:
2N29
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detail:
Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 600mW Through Hole TO-39
